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| Advance Product Information January 19, 2006 2-20 GHz LNA with AGC Key Features * * * * * * * TGA2513-SM Frequency Range: 2-20 GHz 17 dB Nominal Gain > 30 dB Adjustable Gain with Vg2 16 dBm Nominal P1dB 2.5 dB Midband Noise Figure Bias Conditions: Vd=5V, Idq=75 mA, Vg2=2V Package Dimensions: 4.0 x 4.0 x 0.9 mm Product Description The TriQuint TGA2513-SM is a packaged LNA/Gain Block with > 30 dB AGC via the control gate. The LNA operates from 2-20 GHz and is designed using TriQuint's proven standard 0.15 um gate pHEMT production process. The TGA2513-SM provides a nominal 16 dBm of output power at 1 dB gain compression with a small signal gain of 17 dB. Typical noise figure is < 3 dB from 2-15 GHz. The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. Evaluation Boards are available upon request. Lead-free and RoHS compliant Primary Applications * * * Wideband Gain Block / LNA X-Ku Point to Point Radio IF & LO Buffer Applications Measured Performance Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V 21 18 15 12 9 6 3 0 -3 -6 -9 -12 -15 -18 -21 2 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 12 14 16 18 20 Gain Output Input 4 6 8 10 Frequency (GHz) 5 4.5 4 Noise Figure (dB) 3.5 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) Gain (dB) Advance Product Information January 19, 2006 TGA2513-SM TABLE I MAXIMUM RATINGS 1/ SYMBOL V+ Vg1 Vg2 I + PARAMETER Positive Supply Voltage Gate 1 Supply Voltage Range Gate 2 Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 7V -2V TO 0 V -0.5 V TO +3.5 V 151 mA 10 mA 21 dBm See note 3 117 C 260 C -65 to 117 C NOTES 2/ 2/ 2/ 2/, 3/ 4/, 5/ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (117 C - TBASE C) / 32 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 4/ 5/ 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM TABLE II RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 5V, Id = 75 mA Vg2 = 2V Vg1 = ~ -60 mV SYMBOL Gain IRL ORL NF PARAMETER Small Signal Gain Input Return Loss Output Return Loss Noise Figure Output Power @ 1dB Gain Compression TEST CONDITION f = 2-20 GHz f = 2-20 GHz f = 2-20 GHz f = 2-20 GHz NOMINAL 17 12 10 3 UNITS dB dB dB dB P1dB f = 2-20 GHz 16 dBm TABLE III THERMAL INFORMATION Parameter JC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 5 V ID = 75 mA Pdiss = 0.375 W TCH (oC) 97 TJC (qC/W) 32 TM (HRS) 8.1 E+6 Note: Worst case condition with no RF applied, 100% of DC power is dissipated. Package temperature @ 85 C 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Measured Performance Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V, Vg1 = ~-60mV, typical 21 18 15 12 9 6 3 0 -3 -6 -9 -12 -15 -18 -21 0 Gain Output Input 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 12 14 16 18 20 22 24 2 4 6 8 10 Frequency (GHz) 5 4.5 4 Noise Figure (dB) 3.5 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Return Loss (dB) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Gain (dB) Advance Product Information January 19, 2006 TGA2513-SM Measured Performance Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V, Vg1 = ~-60mV, typical 20 18 16 P1dB(dBm) 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 Frequency(GHz) 30 28 Output TOI dBm) 26 24 22 20 18 16 2 4 6 8 10 12 14 16 18 20 5 Frequency(GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Measured Performance * Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V, Vg1 = ~-60mV, typical 20 18 16 14 Gain (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 -40 deg C -25 deg C 0 deg C +25 deg C +50 deg C +75 deg C Frequency (GHz) 0 -40 deg C 0 25 deg C -3 -2 -40 deg C -25 deg C 0 deg C +25 deg C +50 deg C +75 deg C Input Return Loss (dB) -6 -9 -12 -15 -18 -21 -24 -27 0 2 4 6 +25 deg C +50 deg C +75 deg C Output Return Loss (dB) 12 14 16 18 20 22 24 0 deg C -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 8 10 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Frequency (GHz) * Note: Measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been de-embedded. 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Package Pinout Diagram TGA 2513 Date Code Lot Code Top View Dot indicates Pin 1 ; PP *URXQG 3DG Bottom View Pin 1, 3, 4, 5, 7, 8, 10, 13 2 6 9 11 12 Description Ground RF Input Vg1 RF Output Vd Vg2 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Mechanical Drawing [ PP *URXQG 3DG %RWWRP 9LHZ 7ROHUDQFH 8QLWV PP GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Recommended Board Layout Assembly * 5: 1 PF Vc (Vg2) = 2V Vd = 5V 100pF 5) ,1 5) 287 100pF Vg (Vg1)= ~60mV to obtain 75mA drain current 1 PF 5 : Recommended Bias-up Procedure * * * * * * Ensure no RF power is applied to the device Pinch-off device by setting Vg (Vg1) to -1.5V Increase Vd to 5V while monitoring gate current Increase Vc (Vg2) to 2V Increase Vg (Vg1) until drain current reaches 75 mA Apply RF Power Recommended Bias-Down Procedure * * * * Turn off RF power Decrease Vg (Vg1) to -1.5V Decrease Vc (Vg2) to 0 V Decrease Vd to 0 V * The layout is a general purpose drawing that needs to be tuned for the specific application. PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 19, 2006 TGA2513-SM Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate SnPb 3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec Pb Free 3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec Ordering Information Part TGA2513-SM Package Style QFN 12L 4x4 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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